Homray Material Technology

Suzhou, China

• MOQ 100 Piece(s)

Homray Material Technology offers silicon wafers, 3 inch to 12inch Si wafer in different quality grades for researcher grade silicon wafer, dummy grade wafer and production Si wafer. As a professional manufactur company , we are devoted to continuously improve the quality of currently substates and develop large size substrates. Silicon wafer is the most common material and widely used for a varity of high-tech industries , including integrated circuits , detector sensor device , MEMS fabrication, opto-electronic components, and solar cells . Silicon wafer is a very thin round disk cut from high-purity silicon. A round silicon ingot is sliced to thicknesses of approximately 1mm. The surfaces of the resulting disk are polished carefully, then it is cleaned, resulting in the completed wafer. Silicon wafers are made from high-purity silicon, and are the material of semiconductor devices.

• Size4inch
• Place of OriginChina

Silicon Carbide is used as substrate for GaN-epitaxy to produce LEDs in the blue/UV range of the spectrum. SiC is the material of choice because it offers low lattice mismatch for III-nitride epitaxial layers and high thermal conductivity (important for lasers).  Blue LEDs on SiC-basis have been commercially available for several years now. The next important step will be the development of blue SiC-laser-diodes, which can be used to increase data storage capacity among many other applications. The use of SiC-based UV- diodes may also find various applications, i.e. monitoring of combustion processes, all sorts of UV-detection while detector is almost solar-blind. 

• MOQ 1 Piece(s)

Homray material technology’s advanced proprietary technology enables cost effective starting substrates for gan material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry. Gallium nitride (gan) is a binary iiiv direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a wurtzite crystal structure. Its wide band gap of 3.4 ev affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, gan is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

• MOQ 1 Piece
• MaterialGallium Nitride

Omray Material Technology has established the manufacturing technology for free-standing Gallium Nitride wafer GaN substrate which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology, Our GaN substrate has low defect density and less or free macro defect density. Homray Material Technology's Template Products consist of crystalline layers of gallium nitride (GaN), which are deposited on sapphire substrates. Homray Material Technology's GaN Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity, which can improve devices in the cost, yield, and performance.

• MOQ 100 Piece(s)
• Applicationsemiconductor
• Size8inch
• Number Of FlowerP
• Country of OriginChina

• MOQ 1 Piece(s)
• Size2inch

Homray Material Technology’s advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry. Gallium nitride (GaN) is a binary IIIV direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

Homray Material Technology offers semiconductor silicon carbide wafers, 6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology, established a production line to manufacturer SiC substrate, Which is applied in GaN epitaxy device, power devices, high-temperature device and optoelectronic Devices. As a professional company, we are devoted to continuously improve the quality of currently substates and develop large size substrates.

• Materialsilicon carbide
• Country of Originchina
• size3inch

• MOQ 1 Piece(s)
• Size2inch

Homray Material Technology offers semiconductor silicon carbide wafers, 6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology, established a production line to manufacturer SiC substrate, Which is applied in GaN epitaxy device, power devices, high-temperature device and optoelectronic Devices. As a professional company, we are devoted to continuously improve the quality of currently substates and develop large size substrates.