Silicon Carbide Wafer

Homray Material Technology has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers,Which is applied in GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substates and develop large size substrates, as well as epitaxial technology.