Post Buy Requirement
Rockfort Associate Private Limited
Delhi, India
gstGST : 07AACCR1924K1ZD Verified Add Review

Diodes #4494874

FC Ingaas Photodiode

The inventory of raw materials has also been maintained by us in order to keep a record of the entire stock. Moreover, the quality of the inputs is strictly checked by our experts before procurement. To keep a strict check on the quality of the products, we have hired a team of quality analysts having rich domain experience.

Features :

  • High Response within1.01.65μm
  • Low Dark Current
  • Broad spectral response range(0.651.65µm)
  • High reliability
  • 1GHz Bandwidth
  • Planar Structuress


Applications :

  • Optical Transceiver
  • CATV
  • LAN
  • Optical Detection and Optical Measurement

Specifications

Type PIN3-07-13 PIN3-07-14 PIN3-07-15 PIN3-07-23 Unit
Wavelength Range 1.0¡«1.65 1.0¡«1.65 1.0¡«1.65 0.65¡«1.65 Ìm
Linear Range£¨0V£© -70¡«+10 -55¡«+25 -40¡«+30 -70¡«+10 dBm
Responsibility£¨0V£© R1310nm¡Ý0.80
R1550nm¡Ý0.85
0.001¡«0.003
(Ë:1.31Ìm,1.55Ìm)
0.001¡«0.003
(Ë:1.31Ìm,1.55Ìm)
R850nm¡Ý0.20
R1310nm¡Ý0.80
R1550nm¡Ý0.85
A/W
Dark Current (-5V) £¼ 5 nA
Capacitance (-5V) Ü12 pF
Photo-Sensitive Diameter 300 ¦Ìm





View Complete Details

Fast Response Ingaas Photodiode

Timely delivery is our forte as we have up-to-date transit facilities and logistic services. We are a name synonymous to trust and quality, thus we make every attempt to bring forth only finest product range that is manufactured using premium quality range of products.

Description :

  • PIN2-11-12 detector is consist of InGaAs PIN photodiode with75μm sensitive area coupled with fiber pigtail. It’s mainly applied for pre receiver of communication module. User can select appropriate units according to the needed fiber mode and connector.
  • PIN2-02-12 is TO-46 package InGaAs photodiode with 75μm sensitive area. Its main parameters are same to PIN2-11-12. User can select appropriate units according to needed package style.


Features :

  • High Response within1.01.65μm
  • Low Dark Current
  • Firm Coaxial Package and/or TO-46 Package
  • High reliability
  • 1GHz Bandwidth
  • Planar Structure


Applications :

  • Optical Transceiver
  • CATV
  • LAN
  • Optical Detection and Optical Measurement

Specifications

Parameter Min. Typ. Max. Unit
Wavelength Range 1 - 1.65 μm
Sensitive Diameter - 75 - μm
Dark Current-5V - 0.5 2 nA
Capacitance-5V - 0.6 0.8 pF
Linear Range -70 - 3 dBm
1310nm Responsibility-5V 0.8 - - A/W
1550nm Responsibility-5V 0.8 - - A/W
Reflective Loss - -45 -40 dB
Bandwidth - 1 - GHz

Absolute Maximum Ratings

Forward Current 10mA
Optical Current 10mA
Reverse Voltage 25V
Power Waste 100mW
Operating Temperature - 4085
Storage Temperature - 4085
View Complete Details

850nm Laser Diode

As we are counted among the reliable names in the industry, we are involved in carrying out a secured payment processing method. We undertake both online and offline methods for the convenience of the clients. We are instrumental in offering the products in premium packaging material that is certified by the experts, followed by stern packaging of the products by the professionals.

Features :

  • Wavelength - 850nm
  • Output power - 5mWs
  • High Stability
  • High efficiency


Applications :

  • Optical Communication
  • Aiming Indication
  • Free-space Communication
  • Dark Illumination

Graphical Image


Download Detail File : Click Here

Specifications

Type

LDS-0850-0055 / LDS-0850-0057

Output Power (mW)

5

Central Wavelength λ (nm)

850 ± 10

Spectral Width( FWHM) Δλ (nm)

≤ 3.0

Threshold Current (mA)

≤ 20

Operating Current (mA)

≤ 40

Reverse voltage (V)

≤ 2

Slope Efficiency (W/A)

≥ 0.3

Beam Divergence Θ⊥×Θ deg

≤ 40 × 10

Monitor Current ( μ A)

≥ 80

Wavelength Temperature Coefficient nm/

0.3

Emitting Area( μm)

5 × 1

Series Resistance ( Ω )

≤ 15

Polarization

TE

Package Style

TO18

View Complete Details

808nm High Power Laser Diode

We have developed a separate unit for keeping a large stock. This unit is managed and maintained by our adroit professionals and fulfills the ever-growing needs of the clients. Place an order with us for acquiring top-of-the-line quality 808nm High Power Laser Diode in retail or bulk.

Features :

  • Wavelength - 850nm
  • Output power - 5mWs
  • High Stability
  • High efficiency


Applications :

  • Optical Communication
  • Aiming Indication
  • Free-space Communication
  • Dark Illumination

Specifications

Type

LDS-0850-0055 / LDS-0850-0057

Output Power (mW)

5

Central Wavelength λ (nm)

850 ± 10

Spectral Width( FWHM) Δλ (nm)

≤ 3.0

Threshold Current (mA)

≤ 20

Operating Current (mA)

≤ 40

Reverse voltage (V)

≤ 2

Slope Efficiency (W/A)

≥ 0.3

Beam Divergence Θ⊥×Θ deg

≤ 40 × 10

Monitor Current ( μ A)

≥ 80

Wavelength Temperature Coefficient nm/

0.3

Emitting Area( μm)

5 × 1

Series Resistance ( Ω )

≤ 15

Polarization

TE

Package Style

TO18

View Complete Details
Tell Us What are you looking for? Will call you back

Contact Us

  • Mr. Gopal Chandra Bose (Rockfort Associate Private Limited)
  • D601, Chitranjan Park, Chittaranjan Park, Delhi - 110019, India
  • Share us via
  • Call 08069247354 Ext. 149
Retailer of Diodes from Delhi, Delhi by Rockfort Associate Private Limited
Post Buy Requirement
Rockfort Associate Private Limited
Delhi, India
gstGST : 07AACCR1924K1ZD Verified Add Review

Diodes #4494874

FC Ingaas Photodiode

The inventory of raw materials has also been maintained by us in order to keep a record of the entire stock. Moreover, the quality of the inputs is strictly checked by our experts before procurement. To keep a strict check on the quality of the products, we have hired a team of quality analysts having rich domain experience.

Features :

  • High Response within1.01.65μm
  • Low Dark Current
  • Broad spectral response range(0.651.65µm)
  • High reliability
  • 1GHz Bandwidth
  • Planar Structuress


Applications :

  • Optical Transceiver
  • CATV
  • LAN
  • Optical Detection and Optical Measurement

Specifications

Type PIN3-07-13 PIN3-07-14 PIN3-07-15 PIN3-07-23 Unit
Wavelength Range 1.0¡«1.65 1.0¡«1.65 1.0¡«1.65 0.65¡«1.65 Ìm
Linear Range£¨0V£© -70¡«+10 -55¡«+25 -40¡«+30 -70¡«+10 dBm
Responsibility£¨0V£© R1310nm¡Ý0.80
R1550nm¡Ý0.85
0.001¡«0.003
(Ë:1.31Ìm,1.55Ìm)
0.001¡«0.003
(Ë:1.31Ìm,1.55Ìm)
R850nm¡Ý0.20
R1310nm¡Ý0.80
R1550nm¡Ý0.85
A/W
Dark Current (-5V) £¼ 5 nA
Capacitance (-5V) Ü12 pF
Photo-Sensitive Diameter 300 ¦Ìm





View Complete Details

Fast Response Ingaas Photodiode

Timely delivery is our forte as we have up-to-date transit facilities and logistic services. We are a name synonymous to trust and quality, thus we make every attempt to bring forth only finest product range that is manufactured using premium quality range of products.

Description :

  • PIN2-11-12 detector is consist of InGaAs PIN photodiode with75μm sensitive area coupled with fiber pigtail. It’s mainly applied for pre receiver of communication module. User can select appropriate units according to the needed fiber mode and connector.
  • PIN2-02-12 is TO-46 package InGaAs photodiode with 75μm sensitive area. Its main parameters are same to PIN2-11-12. User can select appropriate units according to needed package style.


Features :

  • High Response within1.01.65μm
  • Low Dark Current
  • Firm Coaxial Package and/or TO-46 Package
  • High reliability
  • 1GHz Bandwidth
  • Planar Structure


Applications :

  • Optical Transceiver
  • CATV
  • LAN
  • Optical Detection and Optical Measurement

Specifications

Parameter Min. Typ. Max. Unit
Wavelength Range 1 - 1.65 μm
Sensitive Diameter - 75 - μm
Dark Current-5V - 0.5 2 nA
Capacitance-5V - 0.6 0.8 pF
Linear Range -70 - 3 dBm
1310nm Responsibility-5V 0.8 - - A/W
1550nm Responsibility-5V 0.8 - - A/W
Reflective Loss - -45 -40 dB
Bandwidth - 1 - GHz

Absolute Maximum Ratings

Forward Current 10mA
Optical Current 10mA
Reverse Voltage 25V
Power Waste 100mW
Operating Temperature - 4085
Storage Temperature - 4085
View Complete Details

850nm Laser Diode

As we are counted among the reliable names in the industry, we are involved in carrying out a secured payment processing method. We undertake both online and offline methods for the convenience of the clients. We are instrumental in offering the products in premium packaging material that is certified by the experts, followed by stern packaging of the products by the professionals.

Features :

  • Wavelength - 850nm
  • Output power - 5mWs
  • High Stability
  • High efficiency


Applications :

  • Optical Communication
  • Aiming Indication
  • Free-space Communication
  • Dark Illumination

Graphical Image


Download Detail File : Click Here

Specifications

Type

LDS-0850-0055 / LDS-0850-0057

Output Power (mW)

5

Central Wavelength λ (nm)

850 ± 10

Spectral Width( FWHM) Δλ (nm)

≤ 3.0

Threshold Current (mA)

≤ 20

Operating Current (mA)

≤ 40

Reverse voltage (V)

≤ 2

Slope Efficiency (W/A)

≥ 0.3

Beam Divergence Θ⊥×Θ deg

≤ 40 × 10

Monitor Current ( μ A)

≥ 80

Wavelength Temperature Coefficient nm/

0.3

Emitting Area( μm)

5 × 1

Series Resistance ( Ω )

≤ 15

Polarization

TE

Package Style

TO18

View Complete Details

808nm High Power Laser Diode

We have developed a separate unit for keeping a large stock. This unit is managed and maintained by our adroit professionals and fulfills the ever-growing needs of the clients. Place an order with us for acquiring top-of-the-line quality 808nm High Power Laser Diode in retail or bulk.

Features :

  • Wavelength - 850nm
  • Output power - 5mWs
  • High Stability
  • High efficiency


Applications :

  • Optical Communication
  • Aiming Indication
  • Free-space Communication
  • Dark Illumination

Specifications

Type

LDS-0850-0055 / LDS-0850-0057

Output Power (mW)

5

Central Wavelength λ (nm)

850 ± 10

Spectral Width( FWHM) Δλ (nm)

≤ 3.0

Threshold Current (mA)

≤ 20

Operating Current (mA)

≤ 40

Reverse voltage (V)

≤ 2

Slope Efficiency (W/A)

≥ 0.3

Beam Divergence Θ⊥×Θ deg

≤ 40 × 10

Monitor Current ( μ A)

≥ 80

Wavelength Temperature Coefficient nm/

0.3

Emitting Area( μm)

5 × 1

Series Resistance ( Ω )

≤ 15

Polarization

TE

Package Style

TO18

View Complete Details
Tell Us What are you looking for? Will call you back

Contact Us

  • Mr. Gopal Chandra Bose (Rockfort Associate Private Limited)
  • D601, Chitranjan Park, Chittaranjan Park, Delhi - 110019, India
  • Share us via
  • Call 08069247354 Ext. 149