yangzhou, China
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Leading Manufacturer, Supplier & Retailer of YZPST-MDK55 55A Diode Module, YZPST-MDK300 Diode Modules, YZPST-LS411660 Rectifier Diode Modules, YZPST-MUR20060CT Fast Recovery Diode Module and YZPST-CL08-12 CL08-12 High Voltage Diode.
Details
| Diode Modules | IFAV = 55 A | |||
| MDK 55 | VRRM = 1000-2400V | |||
| VRRM (V) | VRSM (V) | TYPE | ||
| 1000 | 1100 | MDK55-10 | ||
| 1200 | 1300 | MDK55-12 | ||
| 1600 | 1700 | MDK55-16 | ||
| 1800 | 1900 | MDK55-18 | ||
| 2200 | 2300 | MDK55-22 | ||
| 2400 | 2500 | MDK55-24 | ||
Maximum Ratings
| Symbol | Item | Conditions | Ratings | Unit | |
| IF(AV) | Average Forward Current | Single phase,half wave, 180°conduction, TC=114°C | 55 | A | |
| IF(RMS) | R.M.S.Forward Current | Single phase,half wave, 180°conduction, TC=114 °C | 86 | A | |
| IFSM | Surge Forward Current | 1/2 cycle, 50/60HZ, peak value, non-repetitive | 1100/1200 | A | |
| I2t | I2t | Value for one cycle of surge current | 6000 | A2S | |
| Tj | Junction Temperature | -40 to +150 | °C | ||
| Tstg | Storage Temperature | -40 to +125 | °C | ||
| VISO | Isolation Breakdown Voltage(R.M.S.) | Main Terminal to case 1minute | 2500 | V | |
| Md | Mounting torque | Mounting(M6) | Recommended Value 2.5-3.9(25-40) | 4.7(48) | Nm(kgfcm) |
| Terminal(M5) | Recommended Value1.5-2.5(15-25) | 2.7(28) | |||
Electrical Characteristics
| Symbol | Item | Conditions | Ratings | Unit |
| IRRM | Repetitive Peak Reverse Current, max. | Tj=150 °C at VRRM,Singe phase,half wave | 4 | mA |
| VFM | Forward Voltage Drop, max. | Foward current 55A, Tj=25 °C Inst. measurement |
1.16 | V |
| Rth(j-c) | Thermal Impedance, max. | Junction to case | 0.5 | °C/W |
Graphical Image
Details
| VRRM(V) | VRSM(V) | TYPE |
| 1000 | 1100 | MDK300-10 |
| 1200 | 1300 | MDK300-12 |
| 1600 | 1700 | MDK300-16 |
| 1800 | 1900 | MDK300-18 |
| 2200 | 2300 | MDK300-22 |
| 2400 | 2500 | MDK300-24 |
Features
Typical Applications
Features:
Application:
Virtues :Easy mounting small volume, light weight small thermal resistance rate low temperature rise
Fast Recovery Diode Module
|
V RSM V |
V RRM V |
Type |
| 120 | 100 | MUR20010CT |
| 220 | 200 | MUR20020CT |
| 420 | 400 | MUR20040CT |
| 620 | 600 | MUR20060CT |
Details
Dimension (mm)
Application
High Voltage Diode Of CL08-12 Main Specification
| Item | Symbol | Unit | Rating | Conditions |
| RepetitivePeakReverseVoltage | VRRM | KV | 12 | |
| AverageForwardCurrent | IF(AV) | mA | 350 | Tamb=60℃ 50HZSine-halfWave RectificationAverageValue |
| ForwardSurgeCurrent | IFSM | A | 15 | Tamb=25℃ 50HZSine-halfWave,OneShot |
| ReverseSurgeCurrent | IRSM | A | 0.2 | Pulsewidth1mstrianglewavesingle pulse |
| MaximumJunction Temperature= | Tjmax | ℃ | 130 | - |
| StorageTemperature | Tstg | ℃ | -40~+130 | - |
High Voltage Diode Of CL08-12 ElectricSpecification
| Item | Symbol | Unit | Rating | Testconditions |
| ForwardVoltageDrop | VFM | V | 18.5max | IF(AV)=350mA |
| NormalTemperatureReverseCurrent | IRM1 | A | 5max | VRM=12KV |
| HighTemperatureReverseCurrent | IRM2 | A | 50max | Tamb=100℃ VRM=12KV |
| ReverseBreakdownVoltage | VZ | KV | 12~18 | IR=100uA |
| Reverse Recovery Time | trr | nS | 80 max | IF=IR=100mA, 90% |
Derating Of Forward Current
Dimension (in Mm)
The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the sidac breakover voltage point, the sidac switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops below the minimum holding current of the device.
APPLICATIONS:
FEATURES:
ABSOLUTE MAXIMUM RATINGS (TA=25ºC, RH=45%-75%, unless otherwise noted)
Details
|
Maximum surge on-state current |
ITSM |
16.7 |
A |
|
Critical rate-of-rise of on-state current |
diT/dt |
80 |
A |
|
Parameter |
Symbol |
Value |
Unit |
|
Storage temperature range |
Tstg |
-40 to +125 |
℃ |
|
Operating junction temperature range |
Tj |
-40 to +125 |
℃ |
|
On-state RMS Current |
IT |
1 |
A |
ELECTRICAL CHARACTERISTICS (TA=25℃)
|
Symbol |
Parameter |
|
VDRM |
Peak off-state voltage |
|
IDRM |
Off-state current |
|
VS |
Switching voltage |
|
IS |
Switching current |
|
RS |
Switching resistance |
|
VT |
On-state voltage |
|
IH |
Holding current |
|
VBO |
Breakover Voltage |
|
IBO |
Breakover current |
ELECTRICAL CHARACTERISTICS (TA=25℃, Continued)
|
K2000SA |
1 |
180 |
190 |
215 |
50 |
2 |
10 |
0.1 |
K20S |
|
K2200SA |
1 |
190 |
205 |
230 |
50 |
2 |
10 |
0.1 |
K22S |
|
K2400SA |
1 |
200 |
220 |
250 |
50 |
2 |
10 |
0.1 |
K24S |
|
K2600SA |
1 |
220 |
240 |
270 |
50 |
2 |
10 |
0.1 |
K26S |
|
Part Number |
IDRM@VDRM |
VBO |
IBO |
VT@IT=1A |
IH |
RS |
Marking |
||
|
μA |
V |
V |
uA |
V |
mA |
kΩ |
|||
|
max |
min |
min |
max |
max |
max |
min |
min |
||
|
K0900SA |
1 |
70 |
80 |
97 |
50 |
2 |
10 |
0.1 |
K09S |
|
K1050SA |
1 |
90 |
95 |
113 |
50 |
2 |
10 |
0.1 |
K10S |
|
K1200SA |
1 |
100 |
110 |
125 |
50 |
2 |
10 |
0.1 |
K12S |
|
K1300SA |
1 |
110 |
120 |
138 |
50 |
2 |
10 |
0.1 |
K13S |
|
K1400SA |
1 |
120 |
130 |
146 |
50 |
2 |
10 |
0.1 |
K14S |
|
K1500SA |
1 |
130 |
140 |
170 |
50 |
2 |
10 |
0.1 |
K15S |
|
K1800SA |
1 |
160 |
170 |
195 |
50 |
2 |
10 |
0.1 |
K18S |
Features
Typical Applications
Blocking
Conducting
Electrical Characteristics
Outline Drawing
Mr. John Chang (Yangzhou Positioning Co., Ltd.)3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu - 225012, China
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