Electronic Components

We offer a complete product range of ZP5000A/2000V Standard Rectifier, ZP3500A/4200V5000V Standard Rectifier, YZPST-2P6M Silicon Controlled Rectifier, YZPST-X0206 Silicon Controlled Rectifier and 25TTS08 Silicon Controlled Rectifier

ZP5000A/2000V Standard Rectifier

Application Telecom use
Shape Round
Quality Good
Bridge rectifier Recitifier diode
Output Power 2000W
Output Voltage 48V

Features:

All Diffused Structure
High Surge rating
Soft Reverse Recovery
Rugged Ceramic Hermetic Package
Pressure Assembled Device

Typical Applications:

Rectifier for Drives Applications
Medium voltage converters
Pulsed power applications
Crowbar Applications

Case Outline And Dimension

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ZP3500A/4200V~5000V Standard Rectifier

Application Telecom use
Shape Round
Quality Good
Bridge rectifier Recitifier diode
Output Power 2000W
Output Voltage 48V

Features:

All Diffused Structure
High Surge rating
Soft Reverse Recovery
Rugged Ceramic Hermetic Package
Pressure Assembled Device

Typical Applications:

Rectifier for Drives Applications
Medium voltage converters
Pulsed power applications
Crowbar Applications

Reverse Blocking

VRRM (1)	VRSM (1)
1600	1700

VRRM=Repetitive peak reverse voltage

VRSM=Non repetitive peak reverse voltage (2)

Conducting-On State

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Case Outline And Dimension

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Graphical Image 01

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Graphical Image 02

All ratings are specified for Tj=25 Degree Celsius unless otherwise stated.

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YZPST-2P6M Silicon Controlled Rectifier

Number Of Flower Rectifiers
Material Silicon
Application Electric Furnace
Input Voltage 110V
Frequency 50 Hz
Power 2-4kw
Total Carbohydrate 1year
Package TO-202/TO-202-3

Main Feature(Tj=25℃)

Symbol	Value	Unit
IT(AV)	2	A
VDRM/VRRM	≥600	V
IGT	200	uA

Absolute Ratings (Limiting Values)

Symbol	Parameter	Value	Unit
IT(RMS)	RMS on-state current (180°conduction angle)	3	A
IT(AV)	AV on-state current (180°conduction angle)	2	A
ITSM	Non repetitive surge peak on-state Current (tp=10ms)	20	A
IGM	Peak gate current(tp=20us)	1	A
PGM	Peak gate power	0.5	W
PG(AV)	Average gate power	0.1	W
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+110	℃

Thermai Resistances

Symbol	Parameter	Value	Unit
Rth (j-c)	Junction to case	60	℃/W
Rth (j-a)	Junction to ambient	150	℃/W

Electrical Characteristics (Tj=25℃unless Otherwise Stated)

Symbol	Test Conditions		Value			Unit
Symbol	Test Conditions		Min	Type	Max	Unit
IGT	VD=6V, RL=100Ω, RGK=1KΩ		-----	-----	200	uA
VGT	VD=12V, RL=100Ω, RGK=1KΩ		-----	-----	0.8	V
VGD	VD=1/2VDRM, RGK=1KΩ Tj=125℃		0.2	-----	-----	V
IH	VD=24V, RGK=1KΩ, ITM=4A		-----	1	3	mA
dV/dt	VD=2/3VDRM, RGK=1KΩ,Tj=125℃		10	10＃＃	-----	v/μs
VTM	ITM=4A		-----	-----	2.2	V
IDRM IRRM	VD=VDRM VR=VRRM	Tj=125℃	-----	-----	100	uA
IDRM IRRM	VD=VDRM VR=VRRM	Tj=125℃	-----	-----	100	uA