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| Symbol | Value | Unit |
| IT(AV) | 2 | A |
| VDRM/VRRM | ≥600 | V |
| IGT | 200 | uA |
| Symbol | Parameter | Value | Unit |
| IT(RMS) | RMS on-state current (180°conduction angle) | 3 | A |
| IT(AV) | AV on-state current (180°conduction angle) | 2 | A |
| ITSM | Non repetitive surge peak on-state Current (tp=10ms) | 20 | A |
| IGM | Peak gate current(tp=20us) | 1 | A |
| PGM | Peak gate power | 0.5 | W |
| PG(AV) | Average gate power | 0.1 | W |
| Tstg Tj | Storage temperature Operating junction temperature | -40--+150 -40--+110 | ℃ |
| Symbol | Parameter | Value | Unit |
| Rth (j-c) | Junction to case | 60 | ℃/W |
| Rth (j-a) | Junction to ambient | 150 | ℃/W |
| Symbol | Test Conditions | Value | Unit | |||
| Min | Type | Max | ||||
| IGT | VD=6V, RL=100Ω, RGK=1KΩ | ----- | ----- | 200 | uA | |
| VGT | VD=12V, RL=100Ω, RGK=1KΩ | ----- | ----- | 0.8 | V | |
| VGD | VD=1/2VDRM, RGK=1KΩ Tj=125℃ | 0.2 | ----- | ----- | V | |
| IH | VD=24V, RGK=1KΩ, ITM=4A | ----- | 1 | 3 | mA | |
| dV/dt | VD=2/3VDRM, RGK=1KΩ,Tj=125℃ | 10 | 10＃＃ | ----- | v/μs | |
| VTM | ITM=4A | ----- | ----- | 2.2 | V | |
| IDRM IRRM | VD=VDRM VR=VRRM | Tj=125℃ | ----- | ----- | 100 | uA |
| Tj=125℃ | ----- | ----- | 100 | uA | ||
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