100A Power Control Thyristor, Brand Name : YZPST

Brand NameYZPST
IncotermFOB,CFR,CIF
CertificateISO9001-2008,ROHS
Supply Ability1000
Supply TypeManufacturer, Supplier
Preferred Buyer Location All over the world

Detail 01

Symbol	Parameter	Values	Units	Test Conditions
T_j	Operating temperature	-40~125	°C
T_stg	Storage temperature	-40~150	°C
R_{th (j-c)}	Thermal resistance - junction to case	0.4	°C/W	DC operation ,Single sided cooled
R_{th (c-s)}	Thermal resistance - case to sink	0.08	°C/W	Single sided cooled
P	Mounting force	-	Nm
W	Weight	-	g	about

Detail 02

Maximum Ratings And Characteristics

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
I_TAV	Mean on-state current		-	A	Sinewave,180° conduction,Tc=100°C
I_TRMS	RMS value of on-state current		100	A	Nominal value
I_TSM	Peak one cycle surge (non repetitive) current		900	A	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 °C
I²t	I square t		4050	A²s	8.3 msec and 10.0 msec
I_L	Latching current		100	mA	V_D = 12 V; R_L= 12 ohms
I_H	Holding current		30	mA	V_D= 12 V; I = 1 A
V_TM	Peak on-state voltage		2.0	V	I_TM = 150 A; Duty cycle £ 0.01%; T_j = 25 °C
di/dt	Critical rate of rise of on-state current	non-repetitive	300	A/ms	Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM
di/dt	Critical rate of rise of on-state current	repetitive	50	A/ms
BLOCKING
V_DRM V_RRM	Repetitive peak off state voltage Repetitive peak reverse voltage		600	V
V_DSM V_RSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		700	V
I_DRM I_RRM	Repetitive peak off state current Repetitive peak reverse current		10	mA	T_j = 125 °C ,V_RRM V_DRMapplied
dV/dt	Critical rate of voltage rise		100	V/ms	T_J=T_Jmax, linear to 80% rated V_DRM
TRIGGEING
P_G(AV)	Average gate power dissipation		-	W
P_GM	Peak gate power dissipation		-	W
I_GM	Peak gate current		-	A
I_GT	Gate trigger current		200	mA	T_C = 25 °C
V_GT	Gate trigger voltage		3.0	V	T_C = 25 °C
V_T(T0)	Treshold voltage		1	V
r_T	Slope resistance		2.4	mΩ
V_GD	Gate non-trigger voltage		0.2	V	T_j = 125 °C
SWITCHING
t_q	Turn-off time		-	ms	T_j = 125 °C
t_d	Delay time		-	ms	Gate current 1A, di/dt=1A/μs, V_d=0.67%V_DRM, T_J=25 °C
Q_rr	Reverse recovery charge		-