products specification

silicon wafer 2” 3” 4” 5” 6” 8”

size (inch)

diameter 50.8±0.3 76.2±0.3 100±0.5 127±0.5 154±0.5 200±0.5

(mm )

growth cz/fz as requirements

method

grade prime / test / dummy grade

thickness 180-1000 um (+/-25) as required

orientation 100 / 110 / 111

type n-type/p-type as requirements

dopant p-type: boron

n-type: phosphorous/antimony/arsenic

particle ≤30 @0.3um

oxygen ≤18 new ppma

content

carbon ≤1 new ppma

content

resistivity 1-10ohm/cm

others ttv≤15um, bow≤65um, warp≤65um

surface single side polished/double side polished

products specification

silicon wafer 2” 3” 4” 5” 6” 8”

size (inch)

diameter 50.8±0.3 76.2±0.3 100±0.5 127±0.5 154±0.5 200±0.5

(mm )

growth cz/fz as requirements

method

grade prime / test / dummy grade

thickness 180-1000 um (+/-25) as required

orientation 100 / 110 / 111

type n-type/p-type as requirements

dopant p-type: boron

n-type: phosphorous/antimony/arsenic

particle ≤30 @0.3um

oxygen ≤18 new ppma

content

carbon ≤1 new ppma

content

resistivity 1-10ohm/cm

others ttv≤15um, bow≤65um, warp≤65um

surface single side polished/double side polished