3A NPN Silicon Transistor, Brand Name : YZPST

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

350

V

Collector-Emitter Voltage

VCEO

220

V

Emitter-Base Voltage

VEBO

9

V

Collector Current

IC

3

A

Total Power Dissipation

PC

25

W

Junction Temperature

Tj

150

Storage Temperature

Tstg

-55~150

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector-Base Voltage

VCBO

Ic=1mA Ie=0

350

V

Collector-Emitter Voltage

VCEO

Ic=1mA Ib=0

220

V

Emitter-Base Voltage

VEBO

Ie=1mA Ic=0

9

V

Collector-Base Cutoff Current

ICBO

Vcb=350v Ie=0

10

UA

Collector-Emitter Cutoff

Current

ICEO

Vce=220v Ib=0

10

UA

Emitter-Base Cutoff Current

IEBO

Veb=9v Ic=0

10

UA

Collector-Emitter Saturation

Voltage

Vce(sat)

Ic=0.5A Ib=0.1A

0.9

V

Base-Emitter Saturation Voltage

Vbe(sat)

Ic=0.5A Ib=0.1A

1.5

V

DC Current Gain

Hfe

VCE=5v IC=0.2A

20

25

Diode Forward Voltage

Vf

IF=1.0A

2

V

Storage Time

ts

Ic=0.25A (UI9602)

1.5

2.5

us