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    BD139 Triac Transistor, Brand Name : YZPST
    • BD139 Triac Transistor
    • 772496
    • 772502

    BD139 Triac Transistor, Brand Name : YZPST

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    • Brand NameYZPST
    • CertificateISO9001-2008,ROHS
    • TransportationOcean,Air
    • Productivity1000
    • Supply TypeManufacturer, Supplier
    • Preferred Buyer Location All over the world
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    Company Information

    Yangzhou Positioning Tech Co., Ltdverified-icon
    location Yangzhou
    View Number
    • calendar Member Since 7 Years
    • building Nature of Business Supplier
    • Year of Establishment 2003

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    • Product Details

    • Company Details

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    • Brand NameYZPST
    • TransportationOcean,Air
    • IncotermFOB,CFR,CIF
    • HS Code85413000
    • Supply Ability10000
    • CertificateISO9001-2008,ROHS
    • Productivity1000

    Details

    Order codes

    Marking

    Package

    Packaging

    BD135

    BD135

     

     

     

     

     

     

     

     

    SOT-32

     

     

     

     

     

     

     

     

    Tube

    BD135-16

    BD135-16

    BD136

    BD136

    BD136-16

    BD136-16

    BD139

    BD139

    BD139-10

    BD139-10

    BD139-16

    BD139-16

    BD140

    BD140

    BD140-10

    BD140-10

    BD140-16

    BD140-16

    Table 2. Absolute maximum ratings

     

     

     

    Symbol

     

     

     

    Parameter

    Value

     

     

     

    Unit

    NPN

    PNP

    BD135

    BD139

    BD136

    BD140

    VCBO

    Collector-base voltage (IE = 0)

    45

    80

    -45

    -80

    V

    VCEO

    Collector-emitter voltage (IB = 0)

    45

    80

    -45

    -80

    V

    VEBO

    Emitter-base voltage (IC = 0)

    5

    -5

    V

    IC

    Collector current

    1.5

    -1.5

    A

    ICM

    Collector peak current

    3

    -3

    A

    IB

    Base current

    0.5

    -0.5

    A

    PTOT

    Total dissipation at Tc ≤ 25 °C

    12.5

    W

    PTOT

    Total dissipation at Tamb ≤ 25 °C

    1.25

    W

    Tstg

    Storage temperature

    -65 to 150

    °C

    Tj

    Max. operating junction temperature

    150

    °C

    Table 3. Thermal data

    Symbol

    Parameter

    Max value

    Unit

    Rthj-case

    Thermal resistance junction-case

    10

    °C/W

    Rthj-amb

    Thermal resistance junction-ambient

    100

    °C/W

     

    Symbol

     

    Parameter

     

    Polarity

     

    Test conditions

    Value

     

    Unit

    Min.

    Typ.

    Max.

     

     

    ICBO

     

     

    Collector cut-off current (I =0)

     

    NPN

    VCB = 30 V

    VCB = 30 V, TC = 125 °C

     

     

    0.1

    10

    µA

    µA

     

    PNP

    VCB = -30 V

    VCB = -30 V, TC = 125°C

     

     

    -0.1

    -10

    µA

    µA

     

    IEBO

    Emitter cut-off current

    (I =0)

    NPN

    VEB = 5 V

     

     

    10

    µA

    PNP

    VEB = -5 V

     

     

    -10

    µA

     

     

     

     

    VCEO(sus)(1)

     

     

    Collector-emitter sustaining voltage (IB=0)

     

     

    NPN

    IC = 30 mA BD135

    BD139

     

     

    45

    80

     

     

     

     

    V V

     

     

    PNP

    IC = -30 mA BD136

    BD140

     

     

    -45

    -80

     

     

     

     

    V V

     

    VCE(sat) (1)

     

    Collector-emitter saturation voltage

    NPN

    IC = 0.5 A, IB = 0.05 A

     

     

    0.5

    V

    PNP

    IC = -0.5 A, IB = -0.05 A

     

     

    -0.5

    V

     

    VBE (1)

     

    Base-emitter voltage

    NPN

    IC = 0.5 A, VCE = 2 V

     

     

    1

    V

    PNP

    IC = -0.5 A, VCE = -2 V

     

     

    -1

    V

     

     

     

     

    hFE (1)

     

     

     

     

    DC current gain

     

     

    NPN

    IC = 5 mA, VCE = 2 V

    IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V

    25

    40

    25

     

     

     

    250

     

     

     

    PNP

    IC = -5 mA, VCE = -2 V

    IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V

    25

    40

    25

     

     

     

    250

     

     

     

     

     

    hFE (1)

     

     

     

     

    hFE groups

     

     

    NPN

    IC = 150 mA, VCE = 2 V BD139-10

    BD135-16/BD139-16

     

     

    63

    100

     

     

     

    160

    250

     

     

     

    PNP

    IC = -150 mA, VCE = -2 V BD140-10

    BD136-16/BD140-16

     

     

    63

    100

     

     

     

    160

    250

     

    Table 4. On/off states

     

    Symbol

     

    Parameter

     

    Polarity

     

    Test conditions

    Value

     

    Unit

    Min.

    Typ.

    Max.

     

     

    ICBO

     

     

    Collector cut-off current (I =0)

     

    NPN

    VCB = 30 V

    VCB = 30 V, TC = 125 °C

     

     

    0.1

    10

    µA

    µA

     

    PNP

    VCB = -30 V

    VCB = -30 V, TC = 125 °C

     

     

    -0.1

    -10

    µA

    µA

     

    IEBO

    Emitter cut-off current

    (I =0)

    NPN

    VEB = 5 V

     

     

    10

    µA

    PNP

    VEB = -5 V

     

     

    -10

    µA

     

     

     

     

    VCEO(sus)(1)

     

     

    Collector-emitter sustaining voltage (IB=0)

     

     

    NPN

    IC = 30 mA BD135

    BD139

     

     

    45

    80

     

     

     

     

    V V

     

     

    PNP

    IC = -30 mA BD136

    BD140

     

     

    -45

    -80

     

     

     

     

    V V

     

    VCE(sat) (1)

     

    Collector-emitter saturation voltage

    NPN

    IC = 0.5 A, IB = 0.05 A

     

     

    0.5

    V

    PNP

    IC = -0.5 A, IB = -0.05 A

     

     

    -0.5

    V

     

    VBE (1)

     

    Base-emitter voltage

    NPN

    IC = 0.5 A, VCE = 2 V

     

     

    1

    V

    PNP

    IC = -0.5 A, VCE = -2 V

     

     

    -1

    V

     

     

     

     

    hFE (1)

     

     

     

     

    DC current gain

     

     

    NPN

    IC = 5 mA, VCE = 2 V

    IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V

    25

    40

    25

     

     

     

    250

     

     

     

    PNP

    IC = -5 mA, VCE = -2 V

    IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V

    25

    40

    25

     

     

     

    250

     

     

     

     

     

    hFE (1)

     

     

     

     

    hFE groups

     

     

    NPN

    IC = 150 mA, VCE = 2 V BD139-10

    BD135-16/BD139-16

     

     

    63

    100

     

     

     

    160

    250

     

     

     

    PNP

    IC = -150 mA, VCE = -2 V BD140-10

    BD136-16/BD140-16

     

     

    63

    100

     

     

     

    160

    250

     

     

    • Payment Terms L/C, T/T
    • Port of DispatchShanghai
    • Delivery Time30 Days
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    • BD139 Triac Transistor
    • BD139 Triac Transistor
    • BD139 Triac Transistor
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