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Contact SupplierSymbol | Parameter | Value | Unit | |
IT(RMS) | Rms on-state current(full sine wave) | 24 | A | |
ITSM | Non- repetitive Peak on-state Current (Tj=25 ,tp=20ms) | 240 | A | |
I2t | I2t for fusing(tp=10ms) | 200 | A2S | |
IGM | Peak gate current | 5 | A | |
VGM | Peak gate voltage | 16 | V | |
PGM | Peak gate power | 40 | W | |
PG(AV) | Average gate power | 1 | W | |
dIT/dt | Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dlG/dt=0.2A/us) |
| 50 | A/μs |
IV | 50 | |||
Tstg Tj | Storage temperature Operating junction temperature | -40--+150 -40--+125 |
| |
Symbol | Parameter | Condition |
| Type | Unit |
Rth j-c | Thermal Resistance,Junction to case | One cycle | BTA | 2.1 | W |
BTB | 1.2 | W | |||
Rth j-a | Thermal Resisatance,Junction to ambient | ---- | -- | 60 | W |
*Electrical characteristics(Tj=25 unless otherwise stated)
Symbol | Conditions | Type | Max | Unit |
IGT
| BTB24 VD=12V IT=0.1A T2+ G+ T2+ G- T2- G- |
11 15 20 |
18 30 30 |
mA mA mA |
IH | VD=12V IGT=0.1A |
| 50 | mA |
VTM | IT=24A | -1.25- | 1.5 | V |
I DRM | V DRM=800V |
| 10 | μA |
IRRM | VRRM=800V |
| 15 | μA |
VGT | VD=12V IT=0.1A Tj=125 | --
| 1.5 | V |
ID | VD=VDRM(MAX) Tj=125 | -- | 0.5 | mA |
*Dynamic characteristics (Tj=25 unless otherwise stated)
Symbol | Test Conditions | Type | Min | Max | Unit |
dV/dt
| VDM=67%VDm(MAX) Tj=125 | 500 |
250
|
--
|
V/μs |
(dV/dt)c | (dI/dt)c=7A/ms Tj=125 |
-- |
10 |
|
μs |