DC Power Encapsulation Thyristor, Brand Name : YZPST

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
I_TAV	Mean on-state current		350	A	Sinewave,180° conduction,Tc=85
I_TRMS	RMS value of on-state current		550	A	Nominal value
I_TSM	Peak one cycle surge (non repetitive) current		9.1	KA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I²t	I square t		416	KA²s	8.3 msec and 10.0 msec
I_L	Latching current		-	mA	V_D = 24 V; R_L= 12 ohms
I_H	Holding current		-	mA	V_{D =} 24 V; I = 2.5 A
V_TM	Peak on-state voltage		1.4	V	I_TM = 625 A; Duty cycle £ 0.01%
di/dt	Critical rate of rise of on-state current	non-repetitive	800	A/ms	Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM
di/dt	Critical rate of rise of on-state current	repetitive	150	A/ms
BLOCKING
V_DRM V_RRM	Repetitive peak off state voltage Repetitive peak reverse voltage		1200	V
V_DSM V_RSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		1300	V
I_DRM I_RRM	Repetitive peak off state current Repetitive peak reverse current		30	mA	T_j = 125 ^oC ,V_RRM V_DRMapplied
dV/dt	Critical rate of voltage rise		1000	V/ms	T_J=T_Jmax, linear to 80% rated V_DRM
TRIGGEING
P_G(AV)	Average gate power dissipation		3	W
P_GM	Peak gate power dissipation		16	W
I_GM	Peak gate current		-	A
I_GT	Gate trigger current		150	mA	T_C = 25 ^oC
V_GT	Gate trigger voltage		3.0	V	T_C = 25 ^oC
V_GD	Gate non-trigger voltage		0.15	V	T_j = 125 ^oC
SWITCHING
t_q	Turn-off time		150	ms	I_TM=550A, T_J=T_Jmax, di/dt=40A/μs, V_R=50V, dv/dt=20V/μs, Gate 0V 100Ω, t_p=500μs

t_d

Delay time

Gate current A, di/dt=40A/μs,

V_d=0.67%V_DRM, T_J=25^oC

Q_rr

Reverse recovery charge

Thermal And Mechanical

Symbol	Parameter	Values	Units	Test Conditions
T_j	Operating temperature	-40~125	^oC
T_stg	Storage temperature	-40~150	^oC
R_{th (j-c)}	Thermal resistance - junction to case	0.1	^oC/W	DC operation ,Single sided cooled
R_{th (c-s)}	Thermal resistance - case to sink	0.05	^oC/W	Single sided cooled
P	Mounting force	3.5	Nm
W	Weight	-	g	about