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YZPST DCR 1004 Phase Control Power Thyristor

YZPST DCR 1004 Phase Control Power Thyristor

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BrandYZPST
Country of Origin2200V
CertificateISO9000
ConditionNew
Supply TypeManufacturer, Supplier
Preferred Buyer Location All over the world

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Company Information

Yangzhou Positioning Tech Co., Ltd

Member Since 7 Years
Nature of Business Supplier
Year of Establishment 2003

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Product Details
Company Details

Country of Origin2200V
BrandYZPST
IncotermFOB,CFR,CIF
CertificateISO9000
TransportationOcean,Air
ConditionNew

Details

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1300		A	Sinewave,180^o conduction,T_c=65^oC
RMS value of on-state current	I_TRMS		2000		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		20000 18000		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.7x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		800		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		400		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.75		V	I_TM = 3000 A; Duty cPSTCle £ 0.01%
Critical rate of rise of on-state current (5, 6)	di/dt		600		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		200		A/ms	Switching from V_DRM£ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		300 150 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	5 3		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.5	0.7	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		250	150	ms	I_TM = 1000 A; di/dt = 25 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM = 1000 A; di/dt = 25 A/ms; V_R³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		0.025 0.050		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		0.010 0.020		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	24.5	26.7		kN
Weight	W			460	g

Payment Terms L/C, T/T
Port of DispatchSHANGHAI
Delivery Time30 Days

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Seller Contact Details

SellerYangzhou Positioning Tech Co., Ltd
Address Yangzhou

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