NRE Gallium Arsenide Nano Powder

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V direct bandgap semiconductor with a zinc blende crystal structure.

Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide, and others.