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    Ultrananotech GFET-S12 For Sensing Applications, Feature : Durable, High Quality, Long Life

    • MOQ100 Piece
    • Brand NameUltrananotech
    • ConditionNew
    • ApplicationIndustrial, Laboratory
    • FeatureDurable, High Quality, Long Life
    • Country of OriginIndia
    • Supply TypeManufacturer, Exporter, Supplier
    • Preferred Buyer Location All over the world
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    Company Information

    location Hoodi, Bangalore, Karnataka
    5.0/5fill iconfill iconfill iconfill iconfill icon(1)
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    • calendar Member Since 4 Years
    • building Nature of Business Supplier
    • gst icon GST No. 29AABCU9740P1ZH

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    • Product Details

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    • Brand NameUltrananotech
    • ConditionNew
    • ApplicationIndustrial, Laboratory
    • FeatureDurable, High Quality, Long Life
    • Country of OriginIndia

    FEATURES

    • Growth method: CVD synthesis
    • Polymer assisted transfer
    • Chip dimensions: 10 mm x 10 mm
    • Chip thickness: 675 μm
    • Number of GFETs per chip: 27
    • Gate oxide thickness: 90 nm
    • Gate oxide material: SiO2
    • Dielectric Constant of the SiO2 layer: 3.9
    • Resistivity of substrate: 1-10 Ω.cm
    • Metallization: Au contacts
    • Graphene field-effect mobility: >1000 cm2/V.s
    • Dirac point: <50 V
    • Minimum working devices: >75 %


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