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Electric & Electronic Active Devices
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Ultrananotech GFET-S12 For Sensing Applications, Feature : Durable, High Quality, Long Life
Ultrananotech Private Limited
Hoodi, Bangalore, Karnataka
5.0
/5
(1)
Call Now
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Ultrananotech GFET-S12 For Sensing Applications, Feature : Durable, High Quality, Long Life
Get Latest Price
MOQ
100 Piece
Brand Name
Ultrananotech
Condition
New
Application
Industrial, Laboratory
Feature
Durable, High Quality, Long Life
Country of Origin
India
Supply Type
Manufacturer, Exporter, Supplier
Preferred Buyer Location
All over the world
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Company Information
Ultrananotech Private Limited
Hoodi, Bangalore, Karnataka
5.0
/5
(1)
View Number
Member Since
4 Years
Nature of Business
Supplier
GST No.
29AABCU9740P1ZH
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Product Details
Company Details
Brand Name
Ultrananotech
Condition
New
Application
Industrial, Laboratory
Feature
Durable, High Quality, Long Life
Country of Origin
India
FEATURES
Growth method: CVD synthesis
Polymer assisted transfer
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Number of GFETs per chip: 27
Gate oxide thickness: 90 nm
Gate oxide material: SiO2
Dielectric Constant of the SiO2 layer: 3.9
Resistivity of substrate: 1-10 Ω.cm
Metallization: Au contacts
Graphene field-effect mobility: >1000 cm2/V.s
Dirac point: <50 V
Minimum working devices: >75 %
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Seller
Ultrananotech Private Limited
Address
Hoodi, Bangalore, Karnataka
Website
https://www.ultrananotech.co.in
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