IN5822 General Purpose Rectifier Diode

Employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vF
• Low Power LossHigh Efficiency
• Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 116″ from case
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822