Electric Laser Doping Machine

Doping sources pre deposited on the surface of silicon wafer (such as phosphosilicate glass PSG, boron
Silicon glass (BSG, etc.) is reprocessed to remove impurities on the surface or shallow surface of the film
The secondary diffusion in the silicon wafer forms PP + and NN + high-low junctions.
Main Features
532nm green laser, stable and reliable.
The new focusing flat top energy distribution optical path transmission system is designed to effectively improve the optical path stability and minimize the damage of silicon substrate;
Compatible with existing production lines, easy to upgrade and high reliability.