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Contact SupplierSymbol | Value | Unit |
IT(RMS) | 16 | A |
VDRM / VRRM | ≥600 | V |
ITSM | 140 | A |
Symbol | Parameter | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | 16 | A | |
ITSM | Non- repetitive Peak on-state Current (full cycle,Tj=25,F=50Hz,tp=20ms) | 140 | A | |
I2t | I2t Value for fusing(tp=10ms) | 98 | A2S | |
IGM | Peak gate current | 2 | A | |
VGM |
| 5 | V | |
PGM |
| 5 | W | |
PG(AV) | Average gate power | 0.5 | W | |
di/dt | Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dIG/dt=0.2A/μs) | -¡-¢ | 50 | A/μs |
£ | 10 | |||
Tstg Tj | Storage temperature Operating junction temperature | -40--+150 -40--+125 |
| |
Symbol | Parameter | Conditions | Min | Type | Max | Unit |
Rth j-mb
| Thermal Resisatance,Junction to mb | One cycle Half cycle | -- -- | -- -- | 4.0 1.7 | K/W K/W |
Rth j-a | Thermal Resisatance,Junction to ambient | -- | -- | 55 | -- | K/W |
Electrical characteristics (Tj=25 unless otherwise stated)
Symbol | Test Conditions | Min | Type | Max | Unit |
IGT
| VD=12V RL=30Ω T2+ G+ T2+ G- T2- G- |
-- -- -- |
10 15 20 |
10 25 25 |
mA mA mA |
IH | VD=12V IGT=0.1A |
| 6 | 50 | mA |
VTM | IT=20A | -- | 1.3 | 1.7 | V |
I DRM | V DRM=520V |
|
| 20 | μA |
IRRM | VRRM=520V |
|
| 20 | μA |
VGT | VD=12V RL=30Ω |
| 0.7 | 1.65 | V |
ID | VD=VDRM(MAX) Tj=125 | -- | 0.1 | 0.5 | mA |
Dynamic characteristics (Tj=25unless otherwise stated)
Symbol | Test Conditions | Min | Type | Max | Unit | ||
dVD/dt | VDM=67%VDm(MAX) Tj=125 gate open | 50 | 250 | -- | V/μs | ||
dVCOM/dt | VDM=400V Tj=95 IT(RMS)=12A dLCOM/dt=5.4A/ms,gate open |
-
|
-
|
10
|
20
|
--
|
V/μs |