Standard Recovery Stud Diode

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

1600

V

Non repetitive peak reverse voltage

V_RSM

1700

V

Max. average forward current

I_F(AV)

320

A

Sinewave,180^o conduction,T_c=100^oC

Max. RMS forward current

I_F(RMS)

500

A

Nominal value; T_c=180^oC

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

5000

A

10.0 msec (50Hz), half sinewave,

T_J = T_J max, V_RM = 0.6V_RRM

Maximum I²t for fusing

I²t

125

kA²s

Max. forward voltage drop

V_FM

1.4

V

I_TM = 750; T_J = 25 ^oC

Threshold voltage

V_F0

0.85

V

(16.7% x π x I_F(AV) < I <π x I_F(AV)),

T_J = T_J max.

Slope resistance

r_F

0.6

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+180

^oC

Storage temperature

T_stg

-55

+180

^oC

Reverse recovery charge

Q_rr

200

μc

Thermal resistance - junction to case

R_Q (j-c)

-

-

0.2

K/W

Thermal resistamce - case to heatsink

R_Q (c-s)

-

-

0.03

K/W

Mounting force

P

30

Nm

± 20%

Weight

W

-

-

-

g

About

Case style

DO-9

See Outline Table