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Contact SupplierComplementary power Darlington transistors
Features
Applications
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
Order code | Marking | Package | Packaging |
2SDW100 | 2SDW100 |
TO-247 |
Tube |
2SDW200 | 2SDW200 |
Symbol |
Parameter | Value |
Unit | |
NPN | 2SDW100 | |||
PNP | 2SDW200 | |||
VCBO | Collector-emittervoltage(IE= 0) | 80 | V | |
VCEO | Collector-emittervoltage(IB= 0) | 80 | V | |
IC | Collector current | 25 | A | |
ICM | Collector peak current (tP<5 ms) | 40 | A | |
IB | Basecurrent | 6 | A | |
IBM | Base peak current(tP<5 ms) | 10 | A | |
PTOT | Total dissipation at Tc≤25°C | 130 | W | |
TSTG | Storage temperature | -65 to150 | °C | |
TJ | Max.operating junction temperature | 150 | °C | |
Symbol | Parameter | Value | Unit |
RthJC | Thermal resistance junction-case max | 0.96 | °C/W |