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Ultrananotech Private Limited

Ultrananotech Private Limited
location Hoodi, Bangalore, Karnataka

gstGST : 29AABCU9740P1ZH 5.0/5
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Our Products

  1. Metal & Metal Products 40 Products available
  2. Nano Powder 27 Products available
  3. Electric Circuit Components & Parts 21 Products available
  4. Silicon Wafers 16 Products available
  5. Earthing Electrodes 8 Products available
  6. Microcontroller 8 Products available
  7. Industrial Chemicals 6 Products available
  8. Healing Crystals 5 Products available
  9. Plastic Film 4 Products available
  10. Chocolate Snack 4 Products available
  11. Fuel Cells 3 Products available
  12. Powder Coating 3 Products available
  13. Laminated Glass 3 Products available
  14. Chemical Compound 3 Products available
  15. Boron 3 Products available
  16. Industrial Battery 3 Products available
  17. Abrasive Powder 2 Products available
  18. White Pigments 2 Products available
  19. Speciality Chemicals 2 Products available
  20. Metal Ingot 2 Products available
  21. Graphite Products 2 Products available
  22. Titanium Powder 1 Products available
  23. Coating Machine 1 Products available
  24. Transistors 1 Products available
  25. Chromium Powder 1 Products available
  26. Industrial Mineral 1 Products available
  27. PCB Assembly Line Components 1 Products available
  28. Power Insulator 1 Products available
  29. Water Treatment & Purification Plant 1 Products available
  30. Clay 1 Products available
  31. Lab Accessories 1 Products available
  32. Electrical Insulator 1 Products available
  33. Power Converter 1 Products available
  34. Laboratory Equipments 1 Products available
  35. Metal Alloys 1 Products available
  36. Metal Granules 1 Products available
  37. Coal & Charcoal 1 Products available
  38. Chromium 1 Products available
  39. Catalysts 1 Products available
  40. Corrugated Packaging Boxes & Cartons 1 Products available
  41. Base Metal Ores 1 Products available
  42. Textile Chemicals 1 Products available
  43. Foam Sheets 1 Products available
  44. Ferroalloys 1 Products available
  45. Medical Electrode 1 Products available
  46. Gaskets 1 Products available
  47. Inorganic Compounds 1 Products available
  48. Geosynthetics 1 Products available
  49. Computer Chips 1 Products available
  50. Reprocessed Plastic Granules 1 Products available
  51. PU Paints And Coatings 1 Products available
  52. Special Coating 1 Products available
  53. Inorganic Salts 1 Products available
  54. Electrodes 1 Products available
  55. Ores And Minerals 1 Products available
  56. Instrumentation Equipment 1 Products available
  57. Generator And Accessories 1 Products available
  58. Others Products 24 Products available

Microcontroller

Our Complete range of products are GFET-S10 for Sensing applications, GFET-S11 for Sensing applications, GFET-S12 for Sensing applications, GFET-S20 for Sensing Applications and GFET-S20P for Sensing applications.

GFET-S10 For Sensing Applications

GFET-S10 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature High Quality, Long Life
  • Country of Origin India

TYPICAL SPECIFICATIONS

 

  • GFET-S10 (Die size 10 mm x 10 mm)
  • Processed in Clean Room Class 1000
  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 36
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
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GFET-S11 For Sensing Applications

GFET-S11 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Utrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 31
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point: <50 V
  • Minimum working devices: >75 %
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GFET-S12 For Sensing Applications

GFET-S12 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 27
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Dielectric Constant of the SiO2 layer: 3.9
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Dirac point: <50 V
  • Minimum working devices: >75 %
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GFET-S20 For Sensing Applications

GFET-S20 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURE

  • GFET-S20 (Die size 10 mm x 10 mm)
  • Processed in Clean Room Class 1000
  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 12
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
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GFET-S20P For Sensing Applications

GFET-S20P For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURES

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 525 μm
  • Number of GFETs per chip: 12
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Encapsulation: ≈200 nm glutarimide-based
  • Dirac point (liquid gating): <1V
  • Minimum working devices: >75 %
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GFET-S22 For Sensing Applications

GFET-S22 For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India

FEATURE

  • Growth method: CVD synthesis
  • Polymer assisted transfer
  • Chip dimensions: 10 mm x 10 mm
  • Chip thickness: 675 μm
  • Number of GFETs per chip: 12 in parallel
  • Gate oxide thickness: 90 nm
  • Gate oxide material: SiO2
  • Resistivity of substrate: 1-10 Ω.cm
  • Metallization: Au contacts
  • Graphene field-effect mobility: >1000 cm2/V.s
  • Encapsulation: 50 nm Al2O3
  • Dirac point (liquid gating): <1V
  • Minimum working devices: >75 %
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GFET-S22P For Sensing Applications

GFET-S22P For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality
  • Country of Origin India
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MGFET-4D For Sensing Applications

MGFET-4D For Sensing Applications
  • Min. Order (MOQ) 100 Piece
  • Brand Name Ultrananotech
  • Condition New
  • Application Industrial, Laboratory
  • Feature Durable, High Quality, Long Life
  • Country of Origin India
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